Magnetoresistive Random Access Memory (MRAM)
Magnetoresistive Random Access Memory (MRAM) 
is a technology that provides a unique combination
of fast read and write cycle times with
non-volatility and unlimited endurance.
The technology protects data in the event of
power loss and does not require periodic refreshing.
The EV2A16A - the extended-reliability version
of the MR2A16A from Freescale Semiconductor -
is the ideal memory solution for applications that
must permanently store and retrieve critical
data quickly. It perfectly suits the requirements of
critical embedded applications such as avionic,
aerospace and defence environments.
MRAM is the ideal solution for any application
that must permanently store and retrieve data quickly.
MRAM has been identified as a strategic choice
for the benefit of customers in the defence and aerospace
sector for three principle reasons: It is non-volatile memory
capable of providing data retention for more than 20 years,
it provides ultra-fast read/write cycles of 35ns,
it provides exceptional endurance.
Applications
- Defence: Radar, ECM, Field Communication, Electronic warfare
- Aerospace: Flight Computers, Displays, Engine Control
- Industrial: "Down-hole" or "Under-the hood" comuters
Key Features
- Package: 44-lead TSOP type-II, SRAM pin out compatible
- Industrial temperature range (-40°C to 110°C) and military temperature range (-55°C to 125°C)
- Single 3.3V power supply
- Symmetrical read and write cycles with fast access time (35ns)
- Flexible date bus control: 8 bit or 16bit acces
- Full non-volatile operation
Benefits
- Non-volatile with virtually unlimited read-write endurance
- High performance - 35 ns read and write cycles
- Reliable operation across military temperature range
- Small size and scalable for future technologies