SiriusSD® Silicon Drift Detectors


SiriusSD® - e2v scientific instruments' range of electronically cooled (LN free) Silicon Drift Detectors. Designed to easily interface with standard pulse processing electronics, the SiriusSD detectors provide exceptional and stable performance over a wide range of input count rates.

The SiriusSD detector is available in both EDX (SEM mounted with slide assembly) and XRF (various designs, no slide) formats. A choice of window materials are available, from Beryllium (8µm) to Thin Polymer (for light element x-ray transmission) and sensor active areas of 10mm² and 30mm² are offered.

All of our SEM SiriusSD versions are vibration free.

The preamplifier produces industry-standard ramp/restore signals which may be input directly to most analogue or digital pulse processing systems. Another great advantage of this mode of operation is stability of peak centroid and resolution as a function of count rate.

The SiriusSD operates with a single power supply unit and can be supplied with a compact format version of e2v's highly acclaimed 'Titan' digital pulse processor.

Below are some illustrations of the main features and benefits of the SiriusSD detector - excellent resolution and stability, light element response for microanalysis applications, and systems for XRF analysis.

e2v scientific instruments SiriusSD detectors are designed to suit both OEM system manufacturer (instrument integration) and end user (detector exchange/renewal or research applications) requirements.


 

 


 



Best resolutions achieved are as low as 123eV (see above) and with optimised operating peaking times as short as 1.6us, excellent performance can be delivered over a large range of input count rates. At shorter peaking times very high count rates can be processed.

Typical specifications for SiriusSD® detectors:
 
ModelSensor areaWindow optionsResolution eV (Mn K/C)
SiriusSD-1013310mm²Light Element (AP3.3) or 8µm Be<133 / 65
SiriusSD-1012810mm²Light Element (AP3.3) or 8µm Be<128 / 52
SiriusSD-3013830mm²Light Element (AP3.3) or 8µm Be<138 / 70
SiriusSD-3013330mm²Light Element (AP3.3) or 8µm Be<133 / 70

Sensor thickness: 500µm (450µm active)

For further information, or to discuss your application in detail, please contact us.