Capabilities & Technical Information
CCD design capability
Pixel sizes 9 µm to > 40 µm - Device active areas:
- Largest to date 123mm x 46mm
- In principle up to 92 mm x 92 mm
- Full-frame, frame transfer, split frame transfer architectures
- Specialised readout register options
- Thinning and back-illumination a standard production process
- 6-inch CCD wafer production
CCD structures
- Two-, three- and four-phase CCDs
- Defined or supplementary buried channel
- Bi-directional gate protection structures
- On-chip light shields
- Open electrode structures
- Advanced inverted mode operation (also called MPP) for low, dark current
- Anti-blooming options: fixed or gated barrier and shielded drain
- Radiation hardened process
- Amplifier read noise <2e-
- Pixel rate up to 40 MHz per amplifier
Package and test capabilities
Wafer dicing, die etch and wire bonding - Fibre-optic coupling
- Multi-chip focal plane arrays
- Customer-specific encapsulation and output connections
- Optional scintillator, spectral bandpass / optimisation and anti-reflective coating
- Cryogenic, thermoelectric, vacuum and room temperature testing
- Full range of in-house environmental testing and screening
